Heterogeneous superjunction transistor for high-voltage power

This technology describes a new type of power semiconductor device called a heterogeneous superjunction, where two different semiconductor materials are paired together in an alternating pillar-and-trench structure to manage how electric fields are distributed inside the device. Traditional superjunctions use the same material throughout, but here the trench-filling material is chosen specifically because it handles electric fields more efficiently than the pillar material. The result is a power transistor or diode that can block higher voltages while maintaining low resistance, which are the two key trade-offs in power device design. By mixing materials — for example, silicon and a wide-bandgap semiconductor — engineers can push device performance beyond what either material could achieve alone.

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