Charge-balanced wide-bandgap transistor for high-voltage
This patent describes a new type of power transistor that uses a clever charge-balancing technique to improve how the device switches between on and off states. In conventional high-power transistors, charges trapped in the semiconductor during the off-state can cause energy losses and limit how fast the device can switch. By engineering a specific region of the transistor to carry an equal and opposite charge that cancels out the channel charge when the device is off, the design reduces leakage and improves breakdown voltage without sacrificing switching speed. The approach builds on gallium nitride (GaN) or similar wide-bandgap semiconductor platforms commonly used in high-efficiency power electronics.
What you could build
A next-generation GaN or wide-bandgap power transistor chip for use in high-efficiency power converters, motor drives, and EV charging systems; the primary buyers would be power semiconductor manufacturers and power electronics system integrators.
Who in Virginia should care
Defense electronics and power systems contractors in Northern Virginia and the Hampton Roads corridor, plus data center power supply vendors, would have interest in high-efficiency wide-bandgap transistors.
Readiness: Concept
Concept — described but not yet demonstrated. Lab validated — supported by experimental results in the patent. Prototype likely — the text describes a built, working embodiment.
Readiness is inferred from the patent text, not from a lab visit.
The record
- Inventors
- Yuhao ZHANG, Ming XIAO
- Filed
- Patent pending — filed September 7, 2022
- Status
- Application
- Publication number
- US20240079487A1
Ready to talk?
Virginia Tech Intellectual Properties handles licensing for this technology.
Prosim summaries are generated from public patent text and are not legal advice.