Dual-mode volatile and non-volatile resistive memory cell IP
This technology describes a new type of memory cell that uses atomic-scale switches — tiny conductive filaments that form and break at the nanometer level — to store information. By carefully controlling the electrical current through these switches, the same physical cell can behave as volatile memory (like RAM), non-volatile memory (like flash storage), or even as a logic element, all within a single compact design. The cells can be shrunk to the smallest sizes that chip manufacturing can achieve, potentially enabling much denser memory chips. Connecting several of these cells in series also opens a path toward neuromorphic or adaptive computing architectures.
What you could build
A licensable memory cell architecture for semiconductor manufacturers targeting ultra-dense, multi-mode memory chips; primary buyers would be fabless chip designers and memory IP licensing firms seeking alternatives to NAND flash or DRAM for edge AI, IoT, and embedded systems.
Who in Virginia should care
Defense electronics contractors and government computing programs in Northern Virginia — particularly those working on embedded systems, secure hardware, or neuromorphic computing for DoD applications — would have interest in dense, multi-mode memory architectures.
Readiness: Lab validated
Concept — described but not yet demonstrated. Lab validated — supported by experimental results in the patent. Prototype likely — the text describes a built, working embodiment.
Readiness is inferred from the patent text, not from a lab visit.
The record
- Inventors
- Marius Orlowski, Tong Liu, Mohini Verma, Yuhong Kang
- Granted
- October 17, 2017
- Status
- Granted patent
- Patent number
- 9792985
Ready to talk?
Virginia Tech Intellectual Properties handles licensing for this technology.
Prosim summaries are generated from public patent text and are not legal advice.