Quasi-vertical power transistor for high-voltage switching
This patent describes a novel power transistor architecture that routes current both vertically and laterally through the chip — a so-called 'quasi-vertical' design. The key innovation is inserting a buffer layer and precisely arranged semiconductor regions to manage how electricity flows and how heat dissipates, enabling high-voltage switching on substrates that would normally be impractical for true vertical devices. By wrapping a wider-bandgap material around the sidewalls of the current-carrying region, the design improves breakdown voltage and reduces leakage, two of the critical performance limits in power electronics. The result is a power switch architecture that could deliver higher efficiency and voltage handling than conventional lateral devices without requiring the expensive native substrates that true vertical designs demand.
What you could build
A discrete or integrated power switching device — think MOSFETs or JFETs — for use in EV inverters, industrial motor drives, or fast-charging power supplies; semiconductor fabs and fabless power IC companies would be the buyers.
Who in Virginia should care
Defense-adjacent power electronics companies in Northern Virginia and the broader mid-Atlantic corridor, plus Virginia Tech's power electronics research ecosystem, would be natural partners or licensees.
Readiness: Concept
Concept — described but not yet demonstrated. Lab validated — supported by experimental results in the patent. Prototype likely — the text describes a built, working embodiment.
Readiness is inferred from the patent text, not from a lab visit.
The record
- Inventors
- Yuhao Zhang, Yuan Qin
- Granted
- September 15, 2026
- Status
- Granted patent
- Patent number
- 12740093
Ready to talk?
Virginia Tech Intellectual Properties handles licensing for this technology. Email us for an introduction prosim@harbor.capital.
Prosim summaries are generated from public patent text and are not legal advice.