Monolithic cascode GaN HEMT for high-voltage power conversion
This technology is a power transistor chip that combines two types of transistors — one that is naturally 'on' and one that is naturally 'off' — into a single device built on the same piece of semiconductor material. The depletion-mode transistor uses multiple stacked electron channels to handle high current and voltage, while the enhancement-mode transistor provides safe, easy control. By wiring them together in a specific cascode configuration on one chip, the device behaves like a normally-off switch (preferred for safety in power electronics) while still delivering the high performance of a multi-channel GaN transistor. This monolithic integration eliminates the packaging inefficiencies and parasitic losses that come from combining separate chips.
What you could build
A high-performance GaN power transistor chip for use in electric vehicle inverters, fast chargers, data center power supplies, and industrial motor drives — sold to power semiconductor companies and power module manufacturers who need drop-in replacements for silicon IGBTs or discrete GaN solutions.
Who in Virginia should care
Defense electronics primes and RF/power semiconductor companies with Virginia presence (e.g., contractors in the NoVA/Hampton Roads corridor) working on radar, EW, or vehicle electrification power modules.
Readiness: Prototype likely
Concept — described but not yet demonstrated. Lab validated — supported by experimental results in the patent. Prototype likely — the text describes a built, working embodiment.
Readiness is inferred from the patent text, not from a lab visit.
The record
- Inventors
- Yuhao ZHANG, Ming XIAO
- Granted
- October 7, 2025
- Status
- Granted patent
- Patent number
- 12439629
Ready to talk?
Virginia Tech Intellectual Properties handles licensing for this technology.
Prosim summaries are generated from public patent text and are not legal advice.