Low-EMI substrate architecture for SiC and GaN power modules
This technology addresses a persistent interference problem in power electronics modules built with next-generation wide-bandgap transistors (SiC and GaN). When these transistors switch very rapidly, they generate high-frequency noise currents that leak through the insulating layers of the module and escape into surrounding equipment, causing electromagnetic interference (EMI). The invention adds a second insulating layer and a conductive plate inside the module, combined with a specific capacitor arrangement, to trap most of that noise current inside the module itself rather than letting it radiate outward. The result is a power module that is physically more compatible with EMI regulations without requiring bulky external filters.
What you could build
A drop-in power module substrate architecture for SiC/GaN inverters and converters used in EV drivetrains, industrial motor drives, and solar inverters, sold to power module manufacturers or integrated into custom power electronics by OEMs seeking to reduce EMI filter cost and meet regulatory compliance.
Who in Virginia should care
Virginia-based defense and aerospace electronics suppliers, and data center power conversion companies in Northern Virginia, would have direct interest in low-EMI high-frequency power modules.
Readiness: Prototype likely
Concept — described but not yet demonstrated. Lab validated — supported by experimental results in the patent. Prototype likely — the text describes a built, working embodiment.
Readiness is inferred from the patent text, not from a lab visit.
The record
- Inventors
- Christina DiMarino, Dushan Boroyevich, Rolando Burgos, Mark Johnson
- Granted
- July 24, 2018
- Status
- Granted patent
- Patent number
- 10032732
Ready to talk?
Virginia Tech Intellectual Properties handles licensing for this technology.
Prosim summaries are generated from public patent text and are not legal advice.